| PART |
Description |
Maker |
| HY5S6B6DLF-BE HY5S6B6DLF-SE HY5S6B6DLFP-BE HY5S6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|
| IS42VM16800H-6BLI IS42VM16800H-75BI IS42VM16800H-7 |
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42SM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5S6B6DLF-SE HY5S6B6DLF-BE HY5S6B6DSF-BE HY5S6B6D |
4Banks x1M x 16bits Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA
Personal protection, Spectacles; RoHS Compliant: NA
Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY5S6B6D |
(HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
|
Hynix Semiconductor
|
| T4312816B T4312816B-6SG T4312816B-7S T4312816B-7SG |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| K4S560832D-TC1H K4S560832D-TC1L K4S560832D-TC7A K4 |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| T436432B-7S T436432B-7SG T436432B-55SG T436432B-6S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM 200万32内存12k × 32 x 4Banks同步DRAM
|
TM Technology, Inc.
|
| HDD16M72D9RPW-13A HDD16M72D9RPW-13B HDD16M72D9RPW- |
DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块128Mbyte6Mx72bit），基于6Mx8Banks 4K的参考。，184Pin - DIMM内存的锁相环
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
